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Impact of Source to Drain Tunneling on the Ballistic Performance of Ge, GaSb, and GeSn Nanowire p-MOSFETs. (arXiv:1912.05626v1 [physics.app-ph]) http://arxiv.org/abs/1912.05626
Impact of Source to Drain Tunneling on the Ballistic Performance of Ge, GaSb, and GeSn Nanowire p-MOSFETs. (arXiv:1912.05626v1 [physics.app-ph]) http://arxiv.org/abs/1912.05626