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Decoupling of epitaxy related trapping effects in AlGaN/GaN metal-insulator semiconductor high electron mobility transistors. (arXiv:2002.01966v1 [cond-mat.mtrl-sci]) http://arxiv.org/abs/2002.01966
Decoupling of epitaxy related trapping effects in AlGaN/GaN metal-insulator semiconductor high electron mobility transistors. (arXiv:2002.01966v1 [cond-mat.mtrl-sci]) http://arxiv.org/abs/2002.01966