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The effect of the dielectric end groups on the positive bias stress stability of N2200 organic field effect transistors. (arXiv:2104.07089v1 [cond-mat.mtrl-sci]) http://arxiv.org/abs/2104.07089
The effect of the dielectric end groups on the positive bias stress stability of N2200 organic field effect transistors. (arXiv:2104.07089v1 [cond-mat.mtrl-sci]) http://arxiv.org/abs/2104.07089