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First Demonstration of Robust Tri-Gate \b{eta}-Ga2O3 Nano-membrane Field-Effect Transistors Operated Up to 400 {\deg}C. (arXiv:2105.01721v1 [physics.app-ph]) http://arxiv.org/abs/2105.01721
First Demonstration of Robust Tri-Gate \b{eta}-Ga2O3 Nano-membrane Field-Effect Transistors Operated Up to 400 {\deg}C. (arXiv:2105.01721v1 [physics.app-ph]) http://arxiv.org/abs/2105.01721